| Journal Papers |
1.S. An. S. Wu, C. S Tan, G. E. Chang, G. Xiao, and M. Kim*, Modulation of light absorption in flexible GeSn metal-semiconductor-metal photodetectors by mechanical bending, Journal of Materials Chemistry C (In Press).
2.S. Ghosh, K. C. Lin, C. H. Tsai, K. H. Lee, Q. Chen, B. Son, B. Mukhopadhyay, C. S. Tan, and G. E. Chang*, Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors, Optics Express 28(16), 23739-23747 (2020). [DOI:10.1364/OE.398046]
3.Y. C. Tai, P. L. Yeh, S An, H. H Cheng, M. Kim and G. E. Chang*, Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications, Nanotechnology (In press).
4.D. N. Roxby, H. Rivy, C. Gong, X. Gong, Z. Yuan, G. E. Chang, Y. C. Chen*, Microalgae living sensor for metal ion detection with nanocavity-enhanced photoelectrochemistry, Biosensors and Bioelectronics 165(1), 112420 (2020).[DOI: 10.1016/j.bios.2020.112420]
5.H. Kumar, R. Basu, and G. E. Chang*, Impact of temperature and doping on the performance of Ge/GeSn/Ge heterojunction phototransistors, IEEE Photonics Journal 12(3), 6801814 (2020).[10.1109/JPHOT.2020.2996808]
6.S. Ghosh, B. Mukhopadhyay, and G. E. Chang*, Design and analysis of GeSn-based resonant-cavity-enhanced photodetectors for optical communication applications, IEEE Sensors Journal 20(14), 7801-7809 (2020). [DOI: 10.1109/JSEN.2020.2981416]
7.D. N. Roxby, Z. Yuan, S. Krishnamoorthy, P. Wu, W.-C. Tu, G. E. Chang, R. Lau, and Y. C. Chen*, Enhanced biophotocurrent generation in living photosynthetic optical resonator, Advanced Science 7, 1903707 (2020). (Selected as the inside back cover of Advanced Science) [DOI: 10.1002/advs.201903707]
8.Y. Zhang, Z. Yuan, Z. Quao, D. Barshilia, W. Wang, G. E. Chang, and Y. C. Chen*, Tunable microlasers modulated by intracavity spherical confinement with chiral liquid crystal, Advanced Optical Materials 8, 1902184 (2020). [DOI:10.1002/adom.201902184]
9.C. S. Tsai, B. J. Huang, R. A. Soref, G. Sun, H. H. Cheng, and G. E. Chang*, GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2μm band, Optics Letters 45(6), 1463-1466 (2020). [DOI:10.1364/OL.381960]
10.W. T. Hung, D. Barshilia, R. Basu, H. H. Cheng, and G. E. Chang*, Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base, Optics Letters 45(5), 1088-1091 (2020). [DOI: 10.1364/OL.383171]
11.B. J. Huang, C. Y. Chang, Y. D. Hsieh, R. A. Soref, G. Sun, H. H. Cheng, and G. E. Chang*, Electrically-injected GeSn vertical-cavity surface emitters on silicon-on-insulator platforms, ACS Photonics 6(8), 1931-1938 (2019). (Selected as the supplementary cover of ACS Photonics.) [DOI: 10.1021/acsphotonics.8b01678]
12.A. K. Pandey, R. Basu*, H. Kumar, and G. E. Chang*, Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors, IEEE Journal of the Electron Devices Society 7, 118-126 (2019). [DOI: 10.1109/JEDS.2018.2884253]
13.A. K. Pandey, R. Basu, and G. E. Chang*, Optimized Ge1-xSnx/Ge multiple-quantum-well heterojunction phototransistors for high-performance SWIR photodetection, IEEE Sensors Journal 18(14), 5842 - 5852 (2018). [DOI: 10.1109/JSEN.2018.2842107]
14.B. J. Huang, J. H. Lin, H. H. Cheng, and G. E. Chang*, GeSn resonant-cavity-enhanced photodetectors on silicon-on-insulator platforms, Optics Letters 43(6), 1215-1218 (2018). [DOI: 10.1364/OL.43.001215]
15.I. C. Liu, P.C. Chen, L. K. Chau, and G. E. Chang*, Optofluidic refractive-index sensors employing bent waveguide structures for low-cost, rapid chemical and biomedical sensing, Optics Express 26(1), 273-283 (2018). [DOI:10.1364/OE.26.000273]
16.P. C Chen*, R. H. Zhang, Y. Aue-u-lan and G. E. Chang, Micromachining microchannels on cyclic olefin copolymer (COC) substrates with the Taguchi method, Micromachines 8, 264 (2017). [DOI: 10.3390/mi8090264]
17.Y. C. Lin, W. H. Hsieh, L. K. Chau. and G. E. Chang*, Intensity-detection-based guided-mode-resonance optofluidic biosensing system for rapid, low-cost, label-free detection, Sensors and Actuators B: Chemical 250, 659–666 (2017). [DOI: 10.1016/j.snb.2017.04.187]
18.Y. H. Huang, G. E. Chang*, H. Li, and H. H. Cheng, Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer, Optics Letters 42(9), 1652-1655 (2017). [DOI: 10.1364/OL.42.001652]
19.G. E. Chang*, S. W. Chen, and H. H. Cheng, Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response, Optics Express 24(16), 17562-17571 (2016).[DOI: 10.1364/OE.24.017562]
20.G. E. Chang*, R. Basu, B. Mukhopadhyay, and P. K. Basu, Design and modeling of GeSn-based heterojunction phototransistors for communication applications, IEEE Journal of Selected Topics in Quantum Electronics 22(6),1-9 (2016). [DOI:10.1109/JSTQE.2016.2553447]
21.陳世樂、蔡孟勳、張國恩，智動化虛實製造系統控制基礎技術簡介，機械月刊42(3), 16-23 (2016). (Invited).
22.H. Li, T. P. Chen, C. Chang, H. H. Cheng, G. E Chang, and K. M. Hung, Diode-like electrical characteristics of SiGe wrinkled heterostructure operating under both forward and reverse bias, Applied Physics Letters 108, 063106 (2016). [DOI: 10.1063/1.4941759]
23.Y. F. Ku, H. Y. Li, W. H. Hsieh, L. K. Chau, and G. E Chang*, Enhanced sensitivity in injection-molded guided-mode-resonance sensors via low-index cavity layers, Optics Express 23(11), 14850-14859 (2015). This paper was selected by Virtual Journal for Biomedical Optics (VJBO) 10(6), Aug. 4, 2015. [DOI: 10.1364/OE.23.014850]
24.Y. H. Peng, H. H. Cheng, V. Mashanov, and G. E. Chang*, GeSn p-i-n waveguide photodetectors on silicon substrates, Applied Physics Letters 105(23), 231109 (2014). [DOI: 10.1063/1.4903881]
25.J. Z. Chen, H. Li, H. H. Cheng, and G. E. Chang*, Structural and optical characteristics of Ge1−xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers, Optical Materials Express 4(6), 1178-1185 (2014). [DOI: 10.1364/OME.4.001178]
26.H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng*, G. E. Chang, R. A. Soref, and G. Sun, GeSn-based p-i-n photodiodes with strained active layer on a Si wafer, Applied Physics Letters 103, 231907 (2013). [DOI: 10.1063/1.4840135]
27.G. E. Chang*, W. Y. Hsieh, J. Z. Chen, and H. H. Cheng, Quantum-confined photoluminescence from Ge1-xSnx/Ge superlattices on Ge-buffered Si(001) substrates, Optics Letters 38(18), 3485-3487 (2013). [DOI: 10.1364/OL.38.003485]
28.K. Y. Wu, B. H. Tsai, J. Z. Chen, G. E. Chang*, V. I. Mashanov, H. H. Cheng*, G. Sun, and R. A. Soref, Sn-based group-IV structure for resonant tunneling diodes, IEEE Electron Device Letters 34(8), 951-953 (2013). [DOI: 10.1109/LED.2013.2266540]
29.G. E. Chang and H. H. Cheng, Optical gain of germanium infrared lasers on different crystal orientations, Journal of Physics D: Applied Physics 46, 065103 (2013). [DOI:10.1088/0022-3727/46/6/065103]
30.G. E. Chang, K. Y. Wu, H. H. Cheng*, G. Sun, and R. Soref, Transformation of a two-dimensional to one-dimensional energy profile on a spatially deformed Si0.82Ge0.18/Si0.51Ge0.49 wrinkled heterostructure, Journal of Applied Physics 111, 104321 (2012). [DOI: 10.1063/1.4723001]
31.G. E. Chang* and C. O. Chang, Tensile-strained Ge/SiGeSn quantum wells for polarization-insensitive electro-absorption waveguide modulators, IEEE Journal of Quantum Electronics 48(4), 533 - 541 (2012). [DOI: 10.1109/JQE.2012.2187174]
32.G. E. Chang, C. O. Chang, and H. H. Cheng*, Strain analysis of a wrinkled SiGe bilayer thin film, Journal of Applied Physics 111, 034314 (2012). [DOI: 10.1063/1.3682769]
33.G. E. Chang, S. W. Chang, and S L Chuang*, Strain-balanced GezSn1-z/SixGeySn1-x-y multiple-quantum-well lasers, IEEE Journal of Quantum Electronics 46(12), 1813-1820 (2010). [DOI: 10.1109/JQE.2010.2059000]
34.G. E. Chang, C. Y. Lu, S. H. Yang, and S L Chuang*, Optical characteristics of a quantum-dot laser with a metallic waveguide, Optics Letters 35(14), 2373-2375 (2010). [DOI: 10.1364/OL.35.002373]
35.G. E. Chang, S. W. Chang, and S L Chuang*, Theory for n-type doped, tensile-strained Ge-SixGeySn1-x-y quantum-well lasers at telecom wavelength, Optics Express17(14), 11246-11258 (2009). [DOI: 10.1364/OE.17.011246]
36.C. O. Chang*, G. E. Chang, C. S. Chou, W. T. C. Chien, and P. C. Chen, In-plane free vibration of a single-crystal silicon ring, International Journal of Solids and Structures 45, 6114-6132 (2008). [DOI:10.1016/j.ijsolstr.2008.07.033]
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| Conference Papers |
1.C. O. Chang, C. S. Chou, F. H. Shieh, and G. E. Chang, Vibration analysis of single-crystal silicon micro-ring gyroscopes, Proceeding of the 2006 Cross-Strait Workshop on Engineering Mechanics, Taipei, Taiwan, Sep. 29-Oct. 5 (2006).
2.C. O. Chang, G. E. Chang, C. S. Chou and F. H. Shieh, Single-crystal silicon micro-ring gyroscopes-attitude sensors, Proceeding of 3rd International Conference on Recent Advances in Space Technologies, Istanbul, Turkey, June 14-16 (2007).
3.C. O. Chang, G. E. Chang, C. S. Chou and F. H. Shieh, Single-crystal silicon micro-ring gyroscopes, Proceeding of the 12th Asia Pacific Vibration Conference, Sapporo, Japan, Aug. 6-9 (2007).
4.G. E. Chang, C. O. Chang, C. S. Chou, and W. T. C. Chien, Silicon micro-ring gyroscopes, Proceeding of the 2007 ASME International Mechanical Engineering Congress & Exposition, Seattle, USA, Nov. 11-15 (2007).
5.G. E. Chang, C. S. Chou, W. T. C. Chien, P. C. Chen, F. H. Shieh, and C. O. Chang, Analysis and fabrication of anisotropic Si(100) micro-ring gyroscopes, Proceeding of the International Workshop on Solid-State Gyroscope, Yalta, Ukraine, May 18-20 (2009).
6.G. E. Chang and C. O. Chang, Design of strain-free GeSn/SiGeSn quantum-well electroabsorption modulators at 1550 nm wavelength, 7th International Conference on Group IV Photonics, Beijing, China, Sep. 1-3 (2010).
7.Y. H. Hsieh, W. Y. Hsieh, H. H. Tseng, Y. K. Liu, H H Cheng, and G. E. Chang*, Enhanced infrared optical absorption in GeSn alloys for full-telecommunication photodetection, 2012 International Photonic and Optotlectronic Meeting, Wuhan, China, Nov. 1-3 (2012).
8.林文鴻、張國恩*, 矽基鍺錫自聚式量子點力學特性之有限元素分析, 中華民國力學學會第三十六屆全國力學會議, 桃園, 台灣, 11 月 16-17 日 (2012).
9.W. Y. Hsieh, Y. H. You, K. M. He, Y. H. Peng, G. E. Chang*, H. H. Cheng, Enhanced infrared photoluminescence from GeSn alloys, JSAP-OSA Joint Symposia 2013, Kyoto, Japan, Sep. 16-20 (2013) (Invited).
10.G. E. Chang* and H. H. Cheng, Raman study of Ge1-xSnx/Ge superlattices, TVS-2013, Tainan, Taiwan, Oct. 25-26 (2013).
11.Y. H. Peng and G. E. Chang*, Theoretical analysis of optical absorption of GeSn alloys for short-wave infrared applications, 4th International Conference on Engineering and Applied Science (2014 ICEAS), Sapporo, Japan, July 22-24 (2014).
12.Y. H. You, S. Y. Tu, Y. H. Huang and G. E. Chang*, Room-temperature photoluminescence of pseudomorphic Ge0.96Sn0.04 quantum wells grown on silicon-based germanium virtual substrate , 4th International Conference on Engineering and Applied Science (2014 ICEAS), Sapporo
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