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53. Y. Zhou, S. Ojo, C. W. Wu, Y. Miao, H. Tran, J. Grant, G. Abernathy, S.r Amoah, J. Bass, G. Salamo, W. Du, G. E. Chang, J. Liu, J. Margetis, J. Tolle, Y. H. Zhang, G. Sun, R. Soref, B. Li, and S. Q. Yu*, Electrically injected GeSn lasers with peak wavelength up to 2.7 µm, Photonics Research 10(1), 222 (2022).


52. C. T. Yeh,  D. Barshilia, C. J.  Hsieh, H. Y. Li, W. H. Hsieh, and G. E. Chang*, Rapid and Highly Sensitive Detection of C‑reaction Protein Using Robust Self-Compensated Guided-Mode Resonance BioSensing System for Point-of-Care Application, Biosensors 11, 523 (2021).

51. Z. Yuan, X. Cheng, T. Li, Y. Zhou, Y. Zhang, X. Gong, G. E. Chang, M. D. Birowosuto, C. Dang, and Y. C. Chen*, Light-Harvesting in Biophotonic Optofluidic Microcavities via Whispering-Gallery Modes, ACS Applied Materials & Interfaces 13, 36909-36918 (2021)..

50. K. C. Lin, P. R. Huang, H. Li, H. H. Cheng, and G. E. Chang*, Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well photoconductors on silicon, Optics Letters 46(15), 3604-3607 (2021). 

49. C. Y. Chang, R. Bansal, K. C. Lee, G. Sun, R. Soref, H. H. Cheng, and G. E. Chang*, Planar GeSn lateral p-i-n resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonics, Optics Letters 46(13), 3316-3319 (2021).

48.C. Wang, C. Gong, Y. Zhang, Z. Qiao, Z. Yuan, Y. Gong, G. E. Chang, W. C. Tu,* and Y. C. Chen*, Programmable rainbow-colored optofluidic fiber laser encoded with topologically structured chiral droplets, ACS Nano 15(7), 11126–11136 (2021). 

47.S. An, Y. C. Tai, K. C. Lee, H. H. Cheng, G. E. Chang*, and M. Kim, Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress, Nanotechnology 32(35), 355704 (2021)..

46.G. E. Chang, S. Q. Yu, J. Liu, H. H. Cheng, R. A. Soref, and G. Sun*, Achievable performance of uncooled homojunction GeSn mid-infrared photodetectors, IEEE Journal of Selected Topics in Quantum Electronics 28(2) 3800611 (2022). .

45.S. An, S. Wu, K. H. Lee, C. S. Tan, Y. C. Tai, G. E. Chang, and M. Kim*, High-Sensitivity and Mechanically Compliant Flexible Ge Photodetectors with a Vertical p−i−n Configuration, ACS Applied Electronics Materials 3,1780-1786 (2021).

44.Y. D. Hsieh, J. H. Lin, R. Soref, G. Sun, H. H. Cheng, and G. E. Chang*, Electro-absorption modulation in GeSn heterostructures for wide-spectrum mid-infrared silicon photonics, Communications Materials 2,40 (2021).

43.S. Ghosh, H. Kumar, B. Mukhopadhyay, and G. E. Chang*, Design and Modeling of High-Performance DBR-Based Resonant-Cavity-Enhanced GeSn Photodetector for Fiber-Optic Telecommunication Networks, IEEE Sensors Journal 12(8),9900-9908(2021).

42.C. H. Tsai, K. C. Lin, C. C. Cheng, K. C. Lee, H. H. Cheng, and G. E. Chang*, GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics, Optics Letters 46(4),864-867 (2021). 

41.Z. Qiao, X. Gong, P. Guan, Z. Yuan, S. Feng, Y. Zhang, M. Kim, G. E. Chang, Y. C. Chen, Lasing Action in microdroplets modulated by interfacial molecular forces, Advanced Photonics 3(1),016003 (2021).



40.  C. Y. Cheng, C. H. Tsai, P. L. Yeh, S. F. Hung, S. Bao, K. H. Lee, C. S. Tan, and G. E. Chang*, Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication, Optics Letters 45(24), 6683-6686 (2020). 

39.  Y. Lv, H. Li, K. C. Lee, G. E. Chang, T. H. Shieh, X. S. Wu, C. R. Chang, H. C. Wu, K. M. Hung, and H. H. Cheng*, Amplifying photocurrent of graphene on GeSn film by sandwiching a thin oxide between them, Applied Physics Letters 117, 152106 (2020). 

38.  D. Barshilia, L. K. Chau, and G. E. Chang*, Low-cost planar waveguide-based optofluidic sensor for real-time refractive index sensing, Optics Express 28(19), 27337-27345 (2020). 

37.  X Gong, Z. Qiao, P. Guan, S. Fengm, Z. Yuan, C. Huang, G. E. Chang, and Y. C. Chen*, Hydrogel microlasers for versatile biomolecular analysis based on lasing microarray, Advanced Photonics Research, 2000041 (2020). 

36.  S. Ghosh, K. C. Lin, C. H. Tsai, H. Kumar, Q. Chen, L. Zhang, B. Son, C. S Tan, M. Kim, B. Mukhopadhyay, and G. E. Chang*, Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications. Micromachines 11, 795 (2020). 

35.  S. An. S. Wu, C. S Tan, G. E. Chang, G. Xiao, and M. Kim*, Modulation of light absorption in flexible GeSn metal-semiconductor-metal photodetectors by mechanical bending, Journal of Materials Chemistry C 8, 13557-13562 (2020).  (Featured as front outside cover image) 

34.  Y. C. Tai, P. L. Yeh, S An, H. H Cheng, M. Kim and G. E. Chang*, Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications, Nanotechnology 31(44), 445301 (2020). 

33.  S. Ghosh, K. C. Lin, C. H. Tsai, K. H. Lee, Q. Chen, B. Son, B. Mukhopadhyay, C. S. Tan, and G. E. Chang*, Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors, Optics Express 28(16), 23739-23747 (2020). 

32.  D. N. Roxby, H. Rivy, C. Gong, X. Gong, Z. Yuan, G. E. Chang, Y. C. Chen*, Microalgae living sensor for metal ion detection with nanocavity-enhanced  photoelectrochemistry, Biosensors and Bioelectronics, 112420 (2020). 

31.  H. Kumar, R. Basu*, and G. E. Chang*, Impact of temperature and doping on the performance of Ge/Ge1xSnx/Ge heterojunction phototransistors, IEEE Photonic Journal 12(3), 6801814 (2020).

30.  Soumava Ghosh, B. Mukhopadhyay, and G. E. Chang*, Design and analysis of GeSn-based resonant-cavity-enhanced photodetectors for optical communication applications, IEEE Sensors Journal 20(14), 7801-7809 (2020). 

29.  N. Roxby, Z. Yuan, S. Krishnamoorthy, P. Wu, W.-C. Tu, G. E. Chang, R. Lau, and Y. C. Chen*, Enhanced biophotocurrent generation in living photosynthetic optical resonator, Advanced Science 7(11), 1903707 (2020). (Feature as the back inside cover.)

28.  Y. Zhang, Z. Yuan, Z. Quao, D. Barshilia, W. Wang, G. E. Chang, and Y. C. Cheng*, Tunable microlasers modulated by intracavity spherical confinement with chiral liquid crystal, Advanced Optical Materials, 1902184 (2020).

27.  C. H. Tsai, B. J. Huang, Richard A. Soref, Greg Sun, H. H. Cheng, and G. E. Chang*, GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2μm wavelength band, Optics Letters 45(6), 1463-1466 (2020).

26.  W. T. Hung, D. Barshilia, R. Basu, H. H. Cheng, and G. E. Chang*, Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base, Optics Letters 45(5), 1088-1091 (2020). 


25.A. K. PandeyR. Basu*, H. Kumar, and G. E. Chang*, Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors, IEEE Journal of the Electron Devices Society 7, 118-126 (2019). 

24.B. J. Huang, Y. D. Hsieh, G. Sun, R. Soref, H. H. Cheng, and G. E. Chang*, Electrically-injected GeSn vertical-cavity surface emitters on silicon-on-insulator platforms, ACS Photonics 6(8), 1931-1938 (2019).  (Feature as the supplementary cover.) 


23.I C. Liu, P. C. Chen, L. K. Chau, and G. E. Chang*, Optofluidic refractive-index sensors employing bent waveguide structures for low-cost, rapid chemical and biomedical sensing, Optics Express 26(1). 273-283 (2018). 

22.B. J. Huang, J. H. Lin, H. H. Cheng, and G. E. Chang*GeSn resonant-cavity-enhanced photodetectors on silicon-on-insulator platforms, Optics Letters 43(6), 1215-1218 (2018). 

21.A. K. Pandey, R. Basu, A. K. Sharma and G. E. Chang*, Optimizing responsivity of Ge1-xSnx multiple-quantum-well heterojunction phototransistors for high-performance SWIR photodetection, IEEE Sensors Journal 18(14), 5842-5852 (2018).


20.Y. H. Huang, G. E. Chang*, H. Li, and H. H. Cheng, Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer, Optics Letters 42(9), 1652-1655 (2017). 

19.Y. C. Lin, W. H. Hsieh, L. K. Chau. and G. E. Chang*, Intensity-detection-based guided-mode-resonanceoptofluidic biosensing system for rapid, low-cost, label-free detection, Sensors and Actuators B:Chemical 250, 659–666 (2017). 

18.P. C Chen, R. H. Zhang, Y. Aue-u-lan and G. E. Chang, Micromachining microchannels on Cyclic Olefin Copolymer (COC) substrates with the Taguchi method, Micromachines 8, 264 (2017). 

17.H. Li, T. P. Chen, C. Chang, H. H. Cheng, G. E Chang, and K. M. Hung, Diode-like electrical characteristics of SiGe wrinkled heterostructure operating under both forward and reverse bias, Applied Physics Letters 108, 063106 (2016).

16.G. E. Chang*, S. W. Chen, and H. H. Cheng, Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response, Optics Express 24(16), 17562-17571 (2016).

15.G. E. Chang*, R. Basu, B. Mukhopadhyay, and P. K. Basu, Design and modeling of GeSn-based heterojunction phototransistors for communication applications, IEEE Journal of Selected Topics in Quantum Electronics 22(6), 8200409 (2016). 


14.Y. F. Ku, H. Y. Li, W. H. Hsieh, L. K. Chau, and G. E Chang*, Enhanced sensitivity in injection-molded guided-mode-resonance sensors via low-index cavity layers, Optics Express 23(11), 14850-14859 (2015). 


13.Y. H. Peng, H. H. Cheng, V. Mashanov, and G. E. Chang*, GeSn p-i-n waveguide photodetectors on silicon substrates, Applied Physics Letters 105(23), 231109 (2014). 

12.J. Z. Chen, H. Li, H. H. Cheng, and G. E. Chang*, Structural and optical characteristics of Ge1−xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers, Optical Materials Express 4(6), 1178-1185 (2014). 


11.G. E. Chang and H. H. Cheng, Optical gain of germanium infrared lasers on different crystal orientations, Journal of Physics D: Applied Physics 46, 065103 (2013). 

10.H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng*, G. E. Chang, R. A. Soref, and G. Sun, GeSn-based p-i-n photodiodes with strained active layer on a Si wafer, Applied Physics Letters 103, 231907 (2013). 

9.K. Y. Wu, B. H. Tsai, J. Z. Chen, G. E. Chang*, V. I. Mashanov, H. H. Cheng*, G. Sun, and R. A. Soref, Sn-based group-IV structure for resonant tunneling diodes, IEEE Electron Device Letters 34(8), 951-953 (2013).  

8.G. E. Chang*, W. Y. Hsieh, J. Z. Chen, and H. H. Cheng, Quantum-confined photoluminescence from Ge1-xSnx/Ge superlattices on Ge-buffered Si(001) substrates, Optics Letters 38(18), 3485-3487 (2013).


7.G. E. Chang, C. O. Chang, and H. H. Cheng*, Strain analysis of a wrinkled SiGe bilayer thin film, Journal of Applied Physics 111, 034314 (2012). 

6.G. E. Chang* and C. O. Chang, Tensile-strained Ge/SiGeSn quantum wells for polarization-insensitive electro-absorption waveguide modulators, IEEE Journal of Quantum Electronics 48(4)533 - 541 (2012)

5.G. E. Chang, K. Y. Wu, H. H. Cheng*, G. Sun, and R. Soref, Transformation of a two-dimensional to one-dimensional energy profile on a spatially deformed Si0.82Ge0.18/Si0.51Ge0.49 wrinkled heterostructure, Journal of Applied Physics 111, 104321 (2012). 

4.G. E. Chang, C. Y. Lu, S. H. Yang, and S.LChuang*, Optical characteristics of a quantum-dot laser with a metallic waveguide, Optics Letters 35(14), 2373-2375 (2010). 

3.G. E. Chang, S. W. Chang, and S.L. Chuang*, Strain-balanced GezSn1-z/SixGeySn1-x-y multiple-quantum-well lasers, IEEE Journal of Quantum Electronics 46(12), 1813-1820 (2010). 

2.G. E. Chang, S. W. Chang, and S.L. Chuang*, Theory for n-type doped, tensile-strained Ge-SixGeySn1-x-y quantum-well lasers at telecom wavelength, Optics Express 17(14), 11246-11258 (2009). 

1.C. O. Chang*, G. E. Chang, C. S. Chou, W. T. C. Chien, and P. C. Chen, In-plane free vibration of a single-crystal silicon ring, International Journal of Solids and Structures 45, 6114-6132 (2008).





1.Y. H. You, S. Y. Tu, Y. H. Huang and G. E. Chang*, Room-temperature photoluminescence of pseudomorphic Ge0.96Sn0.04 quantum wells grown on silicon-based germanium virtual substrate , 4th International Conference on Engineering and Applied Science (2014 ICEAS), Sapporo

2.Y. H. Peng and G. E. Chang*, Theoretical analysis of optical absorption of GeSn alloys for short-wave infrared applications, 4th International Conference on Engineering and Applied Science (2014 ICEAS), Sapporo, Japan, July 22-24 (2014).

3.G. E. Chang* and H. H. Cheng, Raman study of Ge1-xSnx/Ge superlattices, TVS-2013, Tainan, Taiwan, Oct. 25-26 (2013).

4.W. Y. Hsieh, Y. H. You, K. M. He, Y. H. Peng, G. E. Chang*, H. H. Cheng, Enhanced infrared photoluminescence from GeSn alloys, JSAP-OSA Joint Symposia 2013, Kyoto, Japan, Sep. 16-20 (2013) (Invited).

5.林文鴻、張國恩*, 矽基鍺錫自聚式量子點力學特性之有限元素分析, 中華民國力學學會第三十六屆全國力學會議, 桃園, 台灣, 11 月 16-17 日 (2012).

6.Y. H. Hsieh, W. Y. Hsieh, H. H. Tseng, Y. K. Liu, H H Cheng, and G. E. Chang*, Enhanced infrared optical absorption in GeSn alloys for full-telecommunication photodetection, 2012 International Photonic and Optotlectronic Meeting, Wuhan, China, Nov. 1-3 (2012).

7.G. E. Chang and C. O. Chang, Design of strain-free GeSn/SiGeSn quantum-well electroabsorption modulators at 1550 nm wavelength, 7th International Conference on Group IV Photonics, Beijing, China, Sep. 1-3 (2010).

8.G. E. Chang, C. S. Chou, W. T. C. Chien, P. C. Chen, F. H. Shieh, and C. O. Chang, Analysis and fabrication of anisotropic Si(100) micro-ring gyroscopes, Proceeding of the International Workshop on Solid-State Gyroscope, Yalta, Ukraine, May 18-20 (2009).

9.G. E. Chang, C. O. Chang, C. S. Chou, and W. T. C. Chien, Silicon micro-ring gyroscopes, Proceeding of the 2007 ASME International Mechanical Engineering Congress & Exposition, Seattle, USA, Nov. 11-15 (2007).

10.C. O. Chang, G. E. Chang, C. S. Chou and F. H. Shieh, Single-crystal silicon micro-ring gyroscopes, Proceeding of the 12th Asia Pacific Vibration Conference, Sapporo, Japan, Aug. 6-9 (2007).

11.C. O. Chang, G. E. Chang, C. S. Chou and F. H. Shieh, Single-crystal silicon micro-ring gyroscopes-attitude sensors, Proceeding of 3rd International Conference on Recent Advances in Space Technologies, Istanbul, Turkey, June 14-16 (2007).

12.C. O. Chang, C. S. Chou, F. H. Shieh, and G. E. Chang, Vibration analysis of single-crystal silicon micro-ring gyroscopes, Proceeding of the 2006 Cross-Strait Workshop on Engineering Mechanics, Taipei, Taiwan, Sep. 29-Oct. 5 (2006).